TIP142 [Wing Shing]
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR(HIGH DC CURRENT GAIN); NPN外延硅达林顿晶体管（高直流电流增益）
| 型号： | TIP142 |
| 厂家： | 
WING SHING COMPUTER COMPONENTS |
| 描述： | NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR(HIGH DC CURRENT GAIN) |
| 文件： | 总2页 (文件大小：29K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN EPITAXIAL
TIP140/141/142
SILICON DARLINGTON TRANSISTOR
HIGH DC CURRENT GAIN
•Complementary to TIP145/146/147
SC-65
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic
Symbol
Rating
Unit
Collector-Base Voltage :TIP140
VCBO
60
80
100
60
V
V
V
TIP141
TIP142
Collector-EmitterVoltage :TIP140
VCEO
V
TIP141
TIP142
80
100
5
V
V
V
A
Emitter-Base voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (Tc=25°C)
Junction Temperature
VEBO
IC
10
15
0.5
125
150
-50~150
A
A
W
°C
°C
IB
PC
Tj
Tstg
Storage Temperature
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
ELECTRICAL CHARACTERISTICS (Ta=25°C)
Characterristic
Symbol
Test Condition
Min
Typ
Max
Unit
Collector Emitter Sustaining Voltage :TIP140
VCEO(SUS)
IC=30mA,
IB=0
60
80
100
V
V
V
:TIP141
:TIP142
Collector Cutoff Current
Collector Cutoff Current
:TIP140
:TIP141
:TIP142
:TIP140
:TIP141
:TIP142
ICEO
VCE= 30V ,
VCE= 40V ,
VCE= 50V ,
VCB= 60V , IE=0
VCB= 80V , IE=0
IB=0
IB=0
IB=0
2
2
2
1
1
1
2
mA
mA
mA
mA
mA
mA
mA
ICBO
VCB= 100V , IE=0
Emitter Cutoff Current
DC Current Gain
IEBO
hFE
VEB= 5V ,
VCE= 4V ,
VCE= 4V ,
IC=5A ,
IB=10mA
IC=10A ,
IB=40mA
IC=10A ,
IB=40mA
VCE= 4V ,
IC=10A
IC=0
IC=5A
IC=10A
1000
500
Collector- Emitter Saturation Voltage
VCE(sat)
2
3
3.5
3
V
V
V
Base- Emitter Saturation Voltage
Base- Emitter On Voltage
Delay Time
Rise Time
Storage Time
VBE(sat)
VBE(on)
td
tr
ts
tf
V
0.15
0.55
2.5
µS
µS
µS
µS
Fall
Time
2.5
VCC= 30V ,
IB=20mA
IC=5A
IB1= IB2
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